maximum ratings www.dacosemi.com.tw features t ) j h i t v s h f d v s s f o u d b q b c m f t ; f s p s f w f s t f s f d p w f s z d v s s f o u t ) j h i c b o e x j e u i - 1 - sic schottky diode type 2 200a daco semiconductor co., ltd. DACSB400120CT -55 to +175 operating junction temperature : +175 -55 to storage temperature : ? " q s part number maximum recurrent peak reverse voltage 1200v DACSB400120CT 1200v maximum dc blocking voltage benefits applications t . p u p s e s j w f t t 4 x j u d i n p e f q p x f s t v q q m j f t t & w d i b s h f s t t 4 p m b s j o w f s u f s t t 8 f m e j o h f r v j q n f o u t 6 o j q p m b s s f d u j ? f s t ; f s p t x j u d i j o h m p t t t ) j h i f s f d j f o d z i f,max v rrm v n-m mounting torque m6 screw 3~4.7 repetitive peak reverse voltage t j =25 c 1200 non-repetitive peak forward current (per leg) t c =25 c, t p =10 + s 6400 surge non-repetitive forward current sine halfwave (per leg) i fsm t c =25 c, t p =8.3 ms 1600 t c =150 c, t p =8.3 ms 1000 maximum rating symbol conditions value unit continuous forward current i f t c =135 c 200 a t 5 f n q f s b u v s f * o e f q f o e f o u 4 x j u d i j o h # f i b w j p s t 7 % $ 7 t * f ? t c <135c ? " t 4 n b m m f s i f b u t j o l t 1 b s b m m f m e f w j d f t x j u i p v u u i f s n b m s v o b x b z t 1 p x f s g b d u p s d p s s f d u j p o t % j p e f t o v c c f s t " v u p n p u j w f t j o e v d u j p o i f b u j o h (per leg) t c =150 c, t p =10 + s 4000 % j n f o t j p o t j o mm (1 mm =
lug teminal anode 1 baseplate common cathode lug teminal anode 2 3
www.dacosemi.com.tw - 2 - daco semiconductor co., ltd. ? DACSB400120CT min. typ. max. v dc 1,200 - - -1.61.8 -2.42.9 -10130 - 140 1,400 reverse current i r v r =1,200v, t j =25 c v r =1,200v, t j =175 c dc blocking voltage v diode forward voltage v f i f =200a, t j =25 c i f =200a, t j =175 c electrical characteristics , at t j =25 c, unless otherwise specified. (per leg) static characteristics symbol conditions values unit + a q rr - 617 - nc - 11,120 - -1,104 - -1,034 - r ' jc 0.07 o c/w pf v r =600v, f=1 mhz v r =1,000v, f=1 mhz thermal characteristics (per leg) thermal resistance from junction to case total capacitive charge v r =1,200v, t j =25 c total capacitance c v r =0v, f=1 mhz ac characteristics (per leg) typ. static characteristics symbol values unit min. typ. max. static characteristics symbol conditions values unit t j =25 c t j =25 c t j =25 c apr 2016
www.dacosemi.com.tw - 3 - daco semiconductor co., ltd. ? typical performance DACSB400120CT forward characteristics (parameterized on t j ) reverse characteristics (parameterized on tj) current derating 0 40 80 120 160 200 240 0.0 0.4 0.8 1.2 1.6 2.0 i f (a) v f (v) 0.001 0.01 0.1 1.0 0 20 40 60 80 100 i r (ma) volts (%) - 40 80 120 160 200 25 75 125 175 i f (a) t c ( c) capacitance recovery charge - 2,780 5,560 8,340 11,120 13,900 0 1 10 100 1000 c (pf) v r (v) t j =25 c 10 30 50 70 90 25c 175c 75c 125c 280 2.4 2.8 240 280 single phase,half wave 60hz res istive or inductive load forward surge current apr 2016 175c 125c 75c 25c i fsm (a) cycles numder of cycles at 60hz - cycles - 320 640 960 1,280 1,600 1 10 100 1,920 8.3ms single half sine wave jedec method t j =25 c 0 65 130 195 260 325 390 q rr (nc) v r (v) 650 455 t j =25 c 520 585 0 150 300 450 600 750 900 1,050 1,200
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